JPH0260061B2 - - Google Patents
Info
- Publication number
- JPH0260061B2 JPH0260061B2 JP8045885A JP8045885A JPH0260061B2 JP H0260061 B2 JPH0260061 B2 JP H0260061B2 JP 8045885 A JP8045885 A JP 8045885A JP 8045885 A JP8045885 A JP 8045885A JP H0260061 B2 JPH0260061 B2 JP H0260061B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- semiconductor layer
- arsenic
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000005669 field effect Effects 0.000 claims description 21
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8045885A JPS61237473A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8045885A JPS61237473A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61237473A JPS61237473A (ja) | 1986-10-22 |
| JPH0260061B2 true JPH0260061B2 (en]) | 1990-12-14 |
Family
ID=13718812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8045885A Granted JPS61237473A (ja) | 1985-04-15 | 1985-04-15 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61237473A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171279A (ja) * | 1987-12-25 | 1989-07-06 | Mitsubishi Monsanto Chem Co | 半導体装置 |
| US5177026A (en) * | 1989-05-29 | 1993-01-05 | Mitsubishi Denki Kabushiki Kaisha | Method for producing a compound semiconductor MIS FET |
| EP0469768A1 (en) * | 1990-07-31 | 1992-02-05 | AT&T Corp. | A substantially linear field effect transistor and method of making same |
-
1985
- 1985-04-15 JP JP8045885A patent/JPS61237473A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61237473A (ja) | 1986-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5986287A (en) | Semiconductor structure for a transistor | |
| US4814851A (en) | High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor | |
| US4729000A (en) | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates | |
| KR20070038128A (ko) | Ｃｍｏｓｆｅｔ 구조 | |
| US4605945A (en) | Semiconductor device | |
| JPS5891682A (ja) | 半導体装置 | |
| JPS60134481A (ja) | 半導体装置 | |
| JPH0260061B2 (en]) | ||
| JPS61147577A (ja) | 相補型半導体装置 | |
| US5107314A (en) | Gallium antimonide field-effect transistor | |
| DE3854098T2 (de) | Feldeffekttransistor. | |
| JPS6123364A (ja) | 電界効果トランジスタ | |
| JPH0260062B2 (en]) | ||
| JPS61171170A (ja) | 半導体装置 | |
| EP0093557A2 (en) | High-speed complementary semiconductor integrated circuit | |
| JPH01293666A (ja) | 絶縁ゲート電界効果トランジスタ | |
| JPS60136380A (ja) | 半導体装置 | |
| JPS62283672A (ja) | 電界効果トランジスタ及びその製造方法 | |
| JPH01257372A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JPS61110469A (ja) | 半導体電界効果トランジスタ | |
| JPH01125985A (ja) | 半導体装置 | |
| JPS58162070A (ja) | 電界効果トランジスタ | |
| JPS63177470A (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
| JPH046107B2 (en]) | ||
| KR960015325B1 (ko) | 쌍극자 전위 장벽을 갖는 전계효과 트랜지스터 |